2N2905AHR Datasheet (STMicroelectronics) - Hi-Rel PNP bipolar transistor

2N2905AHR, Hi-Rel PNP bipolar transistor

The 2N2905AHR is a silicon planar epitaxial PNP transistor in a TO-39 package.

It is specifically designed for aerospace Hi-Rel applications, and ESCC qualified in accordance with the 5202-002 specification.

In case of discrepancies between this datasheet and ESCC detailed specification, the latter

2N2905AHR Features

* BVCEO IC (max) HFE at 10 V - 150 mA Operating temperature range 60 V 0.6 A > 100 -65°C to +200°C

* Hi-Rel PNP bipolar transistor Linear gain characteristics ESCC qualified European preferred part list - EPPL Radiation level: lot specific total dose contact marketing for