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2STR1160 - Low voltage fast-switching NPN power transistor

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2STR1160 Product details

Description

The device in a NPN transistor manufactured using new “PB-HCD” (power bipolar E (2) high current density) technology.The resulting transistor shows exceptional high gain NPNB1C3E2 performances coupled with very low saturation voltage.The complementary PNP is the 2STR2160. Product status link 2STR1160 Product summary Order code 2STR1160 Marking 1160 Package SOT-23 Packing Tape and reel DS5711 - Rev 4 - February 2025 For further information, contact your local STMicroelectronics

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