ADP61075W3 Datasheet - STMicroelectronics

ADP61075W3 - SiC MOSFET

carbide Power MOSFET 2nd generation, are characterized by very low RDS(on), very limited switching losses and outstanding performances in synchronous rectification rweocrhkainrTvggehinmhegoiccdAyleeCc.lseTEshtP.risaAcwCtililKoennDsinuRrveIVesrEutepiers.rbTaehcffiioscimepnopcway cientrfsimniaxolpada.

ADP61075W3 Features

* Features AACCEEPPAACCKKDDRRIVIEVE ACEPACK DRIVE

* AQG 324 qualified

* D12

* e0s0igVne7bd5lof0ockrVianugbtovlomocltoaktgiivneegapvpolilctaatgioens

* 3.

* 5 mΩ1o.f2tympicΩaloRfDtSy(opni)cal RDS(on)

* M

* aximuMmaoxpiemrautimve ojupnectr

ADP61075W3-STMicroelectronics.pdf