GB40H65FB Datasheet, Igbt, STMicroelectronics

GB40H65FB Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC

PDF File Details

Part number:

GB40H65FB

Manufacturer:

STMicroelectronics ↗

File Size:

824.12kb

Download:

📄 Datasheet

Description:

Trench gate field-stop igbt. This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB ser

GB40H65FB Application

• Applications
• Photovoltaic inverters
• High frequency converters Description This device is an IGBT developed using an advanced pro

TAGS

GB40H65FB

STMicroelectronics

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