GB40H65FB Datasheet - STMicroelectronics

GB40H65FB, Trench gate field-stop IGBT

STGB40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic .
This device is an IGBT developed using an advanced proprietary trench gate field-stop structure.

Features

* Maximum junction temperature: TJ = 175 °C
* High speed switching series
* Minimized tail current
* Low saturation voltage: VCE(sat) = 1.6 V (typ. ) @ IC = 40 A
* Tight parameter distribution
* Safe paralleling

Applications

* Photovoltaic inverters

GB40H65FB-STMicroelectronics.pdf