GB40H65FB

Trench gate field-stop IGBT

STMicroelectronics

GB40H65FB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A

* Tight parameter distribution

* Safe paralleling

* Low thermal resistance Applications

* Photovoltaic inve

GB40H65FB General Description

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slig.

GB40H65FB Datasheet (824.12 KB)

GB40H65FB Datasheet Preview — Preview of GB40H65FB PDF

Datasheet Details

Part number:

GB40H65FB

Manufacturer:

STMicroelectronics ↗

File Size:

824.12 KB

Description:

Trench gate field-stop igbt.
STGB40H65FB Trench gate field-stop IGBT, HB series 650 V, 40 A high speed Datasheet - production data TAB 2 3 1 D²PAK Figure 1: Internal schematic .

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GB40H65FB Trench gate field-stop IGBT STMicroelectronics

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GB40H65FB Features

GB40H65FB General Description

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