GB40H65FB Datasheet - STMicroelectronics

GB40H65FB Trench gate field-stop IGBT

This device is an IGBT developed using an advanced proprietary trench gate field-stop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slig.

GB40H65FB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* Low saturation voltage: VCE(sat) = 1.6 V (typ.) @ IC = 40 A

* Tight parameter distribution

* Safe paralleling

* Low thermal resistance Applications

* Photovoltaic inve

GB40H65FB Datasheet (824.12 KB)