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M28F101 1 Mb FLASH MEMORY

M28F101 Description

M28F101 1 Mb (128K x 8, Chip Erase) FLASH MEMORY 5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs ty.
The M28F101 FLASH Memory is a non-volatile memory which may be erased electrically at the chip level and programmed byte-by-byte.

M28F101 Applications

* where the memory has to be reprogrammed in the equipment. The access time of 70ns makes the device suitable for use in high speed microprocessor systems. 32 1 PDIP32 (P) PLCC32 (K) TSOP32 (N) 8 x 20 mm Figure 1. Logic Dia

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FLASH MEMORY STMicroelectronics
STMicroelectronics M28F101-like datasheet