M28F201 - 2 Mb FLASH MEMORY
The M28F201 FLASH Memory product is a nonvolatile memories which may be erased electrically at the chip level and programmed byte-by-byte.
It is organised as 256K bytes.
It uses a command register architecture to select the operating modes and thus provide a simple microprocessor interface.
The M28F
M28F201 2 Mb (256K x 8, Chip Erase) FLASH MEMORY 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION Active Current: 15mA typical Stand-by Current: 10µA typical 10,000 PROGRAM/ERASE CYCLES INTEGRATED ERASE/PROGRAM-STOP TIMER OTP COMPATIBLE PACKAGES and PINOUTS ELECTRONIC SIGNATURE Manufacturer Code: 20h Device Code: F4h PLCC32 (K) Figure 1.
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