M28F102
207.38kb
1 mbit flash memory. The M28F102 Flash memory is a non-volatile memory that may be erased electrically at the chip level and programmed by word. It is org
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M28F101 - 1 Mb FLASH MEMORY
(STMicroelectronics)
M28F101
1 Mb (128K x 8, Chip Erase) FLASH MEMORY
5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE
FAST ACCESS TIME: 70ns BYTE PROGRAMING TIME: 10µs ty.
M28F008 - 8 MBIT (1 MBIT x 8) FLASH MEMORY
(Intel Corporation)
M28F008 8 MBIT (1 MBIT x 8) FLASH MEMORY
Y
High-Density Symmetrically Blocked Architecture Sixteen 64 Kbyte Blocks Extended Cycling Capability 10K Bl.
M28F010 - 1024K (128K x 8) CMOS FLASH MEMORY
(Intel Corporation)
M28F010 1024K (128K x 8) CMOS FLASH MEMORY
Y
Y
Y
Y
Y
Flash Electrical Chip-Erase 5 Second Typical Quick-Pulse Programming Algorithm 10 ms Typical.
M28F201 - 2 Mb FLASH MEMORY
(STMicroelectronics)
M28F201
2 Mb (256K x 8, Chip Erase) FLASH MEMORY
5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 70ns BYTE PROGRAMMING TIME: 10µs .
M28F210 - (M28F210 / M28F220) 2M Flash Memory
(ST Microelectronics)
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M28F211 - (M28F211 / M28F221) 2M Flash Memory
(ST Microelectronics)
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M28F220 - (M28F210 / M28F220) 2M Flash Memory
(ST Microelectronics)
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M28F221 - (M28F211 / M28F221) 2M Flash Memory
(ST Microelectronics)
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M28F256 - 256 Kbit Flash Memory
(STMicroelectronics)
M28F256
256 Kbit (32Kb x8, Bulk) Flash Memory
5V ±10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMING TIME: 10µs typic.
M28F410 - 4-Megabit Flash Memory
(ST Microelectronics)
M28F410 M28F420
4 Megabit (x8 or x16, Block Erase) FLASH MEMORY
PRELIMINARY DATA
DUAL x8 and x16 ORGANIZATION SMALL SIZE PLASTIC PACKAGES TSOP56 and .
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