M28F102 Datasheet - STMicroelectronics

M28F102 1 Mbit Flash Memory

The M28F102 Flash memory is a non-volatile memory that may be erased electrically at the chip level and programmed by word. It is organised as 64 Kwords of 16 bits. It uses a command register architectureto select the operatingmodes and thus provides a simple microprocessor interface. The device is .

www.DataSheet.co.kr M28F102 1 Mbit (64Kb x16, Bulk) Flash Memory 5V ± 10% SUPPLY VOLTAGE 12V PROGRAMMING VOLTAGE FAST ACCESS TIME: 90ns BYTE PROGRAMMING TIME: 10µs typical ELECTRICAL CHIP ERASE in 1s RANGE LOW POWER CONSUMPTION Stand-by Current: 5µA typical 10,000 ERASE/PROGRAM CYCLES OTP COMPATIBLE PACKAGES and PINOUT INTEGRATED ERASE/PROGRAM-STOP TIMER 20 YEARS DATA RETENTION Defectivity below 1ppm/year ELECTRONIC SIGNATURE Manufacturer Code: 0020h Devi.

M28F102 Features

* llowed by an Erase Verify

M28F102_STMicroelectronics.pdf