MASTERGAN1 Datasheet - STMicroelectronics

MASTERGAN1 High power density 600V Half bridge driver

The MASTERGAN1 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in half‑bridge configuration. The integrated power GaNs have RDS(ON) of 150 mΩ and 650 V drain‑source breakdown voltage, while the high side of the embedded gate driver can be eas.

MASTERGAN1 Features

* 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:

* QFN 9 x 9 x 1 mm package

* RDS(ON) = 150 mΩ

* IDS(MAX) = 10 A

* Reverse current capability

* Zero reverse recovery loss

* UVLO protection on

MASTERGAN1-STMicroelectronics.pdf