* 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors:
* QFN 9 x 9 x 1 mm package
* RDS(ON) = 150 mΩ
* IDS(MAX) = 10 A
* Reverse current capability
* Zero reverse recovery loss
* UVLO protection on
MASTERGAN1 Datasheet (524.93 KB)
MASTERGAN1
524.93 KB
High power density 600v half bridge driver.
MASTERGAN1 Datasheet High power density 600V Half bridge driver with two enhancement mode GaN HEMT Product status link MASTERGAN1 Product label Feat.
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