* 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:
* QFN 9 x 9 x 1 mm package
* RDS(ON) = 150 mΩ (LS) + 225 mΩ (HS)
* IDS(MAX) = 10 A (LS) + 6.5 A (HS)
* Reverse current capabilit
MASTERGAN2 Datasheet (675.77 KB)
MASTERGAN2
675.77 KB
High power density 600v half bridge driver.
MASTERGAN2 Datasheet High power density 600V Half bridge driver with two enhancement mode GaN HEMT Product status link MASTERGAN2 Product label Feat.
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