* 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:
* QFN 9 x 9 x 1 mm package
* RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS)
* IDS(MAX) = 6.5 A (LS) + 4 A (HS)
* Reverse current capability
MASTERGAN3 Datasheet (610.81 KB)
MASTERGAN3
610.81 KB
High power density 600v half bridge driver.
MASTERGAN3
Datasheet
High power density 600 V Half bridge driver with two enhancement mode GaNHEMT
Product status link MASTERGAN3
Product label
Feat.
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