MASTERGAN3 Datasheet (STMicroelectronics) - High power density 600V Half bridge driver

MASTERGAN3, High power density 600V Half bridge driver

The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge configuration.

The integrated power GaNs have 650 V drain‑source blocking voltage and RDS(ON) of 225 mΩ and 450 mΩ for Low side and High side respectiv

MASTERGAN3 Features

* 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:

* QFN 9 x 9 x 1 mm package

* RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS)

* IDS(MAX) = 6.5 A (LS) + 4 A (HS)

* Reverse current capability