MASTERGAN3 High power density 600V Half bridge driver

STMicroelectronics

Description

MASTERGAN3 Datasheet High power density 600 V Half bridge driver with two enhancement mode GaNHEMT Product status link MASTERGAN3 Product label Feat.
The MASTERGAN3 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in asymmetrical half‑bridge c.

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Datasheet Specifications

Part number: MASTERGAN3
Manufacturer: STMicroelectronics ↗
File Size: 610.81 KB
Datasheet: MASTERGAN3-STMicroelectronics.pdf
Description: High power density 600V Half bridge driver

Features

* 600 V system-in-package integrating half-bridge gate driver and high-voltage power GaN transistors in asymmetrical configuration:
* QFN 9 x 9 x 1 mm package
* RDS(ON) = 225 mΩ (LS) + 450 mΩ (HS)
* IDS(MAX) = 6.5 A (LS) + 4 A (HS)
* Reverse current capability

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MASTERGAN3 High power density 600V Half bridge driver STMicroelectronics

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