* 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
* QFN 9 x 9 x 1 mm package
* RDS(ON) = 450 mΩ
* IDS(MAX) = 4 A
* Reverse current capability
* Zero reverse recovery loss
* UVLO protection on
MASTERGAN5 Datasheet (618.20 KB)
MASTERGAN5
618.20 KB
High power density 600v half-bridge driver.
MASTERGAN5
Datasheet
High power density 600 V half-bridge driver with two enhancement mode GaNHEMT
Product status link MASTERGAN5
Product label
Feat.
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