MASTERGAN4 Datasheet - STMicroelectronics

MASTERGAN4 High power density 600V half-bridge driver

The MASTERGAN4 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors in half bridge configuration. The integrated power GaNs have 650 V drain-source blocking voltage and RDS(ON) of 225 mΩ, while the high side of the embedded gate driver can b.

MASTERGAN4 Features

* 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:

* QFN 9 x 9 x 1 mm package

* RDS(ON) = 225 mΩ

* IDS(MAX) = 6.5 A

* Reverse current capability

* Zero reverse recovery loss

* UVLO protection o

MASTERGAN4-STMicroelectronics.pdf