* 600 V system-in-package integrating half-bridge gate driver and high-voltage GaN power transistors:
* QFN 9 x 9 x 1 mm package
* RDS(ON) = 225 mΩ
* IDS(MAX) = 6.5 A
* Reverse current capability
* Zero reverse recovery loss
* UVLO protection o
MASTERGAN4 Datasheet (468.83 KB)
MASTERGAN4
468.83 KB
High power density 600v half-bridge driver.
MASTERGAN4
Datasheet
High power density 600V half-bridge driver with two enhancement mode GaN HEMT
Product status link MASTERGAN4
Product label
Feat.
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