Datasheet4U Logo Datasheet4U.com

MJD112 - Complementary power Darlington transistor

MJD112 Description

MJD112 MJD117 Complementary power Darlington transistors .
The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration.

MJD112 Features

* Good hFE linearity
* High fT frequency

📥 Download Datasheet

Preview of MJD112 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • MJD112L - EPITAXIAL PLANAR NPN TRANSISTOR (KEC)
  • MJD117 - PNP Silicon Darlington Transistor (Fairchild Semiconductor)
  • MJD117L - EPITAXIAL PLANAR PNP TRANSISTOR (KEC)
  • MJD122 - Epitaxial Planar NPN Transistor (GME)
  • MJD122-1 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (ST Microelectronics)
  • MJD127 - Complementary Darlington Power Transistor (ON Semiconductor)
  • MJD127-1 - COMPLEMENTARY POWER DARLINGTON TRANSISTORS (ST Microelectronics)
  • MJD127S - PNP Transistor (MCC)

📌 All Tags

STMicroelectronics MJD112-like datasheet