Datasheet4U Logo Datasheet4U.com

MJD112

Complementary power Darlington transistor

MJD112 Features

* Good hFE linearity

* High fT frequency

* Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Application

* Linear and switching industrial equipment Description The devices are manufactured in planar technology with “base island” layout and mono

MJD112 General Description

The devices are manufactured in planar technology with “base island” layout and monolithic Darlington configuration. . TAB 3 1 TO-252 (DPAK) Figure 1. Internal schematic diagram R1 typ. = 15 kΩ R2 typ. = 100 Ω Table 1. Device summary Order codes Marking MJD112T4 MJD117T4 MJD112 MJD117 Janua.

MJD112 Datasheet (379.29 KB)

Preview of MJD112 PDF

Datasheet Details

Part number:

MJD112

Manufacturer:

STMicroelectronics ↗

File Size:

379.29 KB

Description:

Complementary power darlington transistor.

📁 Related Datasheet

MJD112 Silicon NPN transistor (BLUE ROCKET ELECTRONICS)

MJD112 Silicon NPN epitaxial planer Transistors (MCC)

MJD112 Silicon NPN Power Transistor (Inchange Semiconductor)

MJD112 NPN Silicon Darlington Transistor (Fairchild Semiconductor)

MJD112 COMPLEMENTARY DARLINGTON PLASTIC POWER TRANSISTORS (CDIL)

MJD112 NPN Transistor (JCET)

MJD112 Epitaxial Planar NPN Transistor (GME)

MJD112 Complementary Darlington Power Transistor (ON Semiconductor)

MJD112 NPN Transistor (MCC)

MJD112 EPITAXIAL PLANAR NPN TRANSISTOR (KEC)

TAGS

MJD112 Complementary power Darlington transistor STMicroelectronics

Image Gallery

MJD112 Datasheet Preview Page 2 MJD112 Datasheet Preview Page 3

MJD112 Distributor