SCTWA60N120G2-4 Silicon carbide Power MOSFET

STMicroelectronics

Description

SCTWA60N120G2-4 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Drive.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTWA60N120G2-4
Manufacturer: STMicroelectronics ↗
File Size: 192.70 KB
Datasheet: SCTWA60N120G2-4-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCTWA60N120G2-4 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200 °C)
* Source sensing pin for increas

Applications

* Switching mode power supply
* DC-DC converters

SCTWA60N120G2-4 Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTWA60N120G2-4 Silicon carbide Power MOSFET STMicroelectronics

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