SCTWA60N120G2-4 - Silicon carbide Power MOSFET
SCTWA60N120G2-4 Features
* Order code VDS RDS(on) max. ID SCTWA60N120G2-4 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200 °C)
* Source sensing pin for increas
