* Order code VDS RDS(on) max. ID SCTWA60N120G2-4 1200 V 52 mΩ 60 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200 °C)
* Source sensing pin for increas
SCTWA60N120G2-4 Datasheet (192.70 KB)
SCTWA60N120G2-4
192.70 KB
Silicon carbide power mosfet.
SCTWA60N120G2-4
Datasheet
Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package
HiP247-4
2 34 1
Drain(1, TAB)
Gate(4) Drive.
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