SCTWA60N120G2-4 Datasheet, Mosfet, STMicroelectronics

SCTWA60N120G2-4 Features

• Mosfet Order code VDS RDS(on) max. ID SCTWA60N120G2-4 1200 V 52 mΩ 60 A
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance <

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Part number:

SCTWA60N120G2-4

Manufacturer:

STMicroelectronics ↗

File Size:

192.70kb

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📄 Datasheet

Description:

Silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA60N120G2-4 Application

• Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control Description This silicon carbide P

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SCTWA60N120G2-4

STMicroelectronics

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