SCTWA40N120G2V

Silicon carbide Power MOSFET

STMicroelectronics

* Order code VDS RDS(on) max. ID SCTWA40N120G2V 1200 V 100 mΩ 36 A

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Very high operating junction temperature capability (TJ = 200 °C) Applications

* Switching mode p

SCTWA40N120G2V

223.65 KB

Silicon carbide power mosfet.

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