SCTWA40N120G2V Silicon carbide Power MOSFET

STMicroelectronics

Description

SCTWA40N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package HiP247 long leads D(2, TAB) .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

📥 Download Datasheet

SCTWA40N120G2V Datasheet Preview — Preview of SCTWA40N120G2V PDF

Datasheet Specifications

Part number: SCTWA40N120G2V
Manufacturer: STMicroelectronics ↗
File Size: 223.65 KB
Datasheet: SCTWA40N120G2V-STMicroelectronics.pdf
Description: Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCTWA40N120G2V 1200 V 100 mΩ 36 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance

Applications

* Switching mode power supply
* DC-DC converters

SCTWA40N120G2V Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

📌 All Tags

SCTWA40N120G2V Silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTWA40N120G2V-like datasheet