SCTWA40N120G2V - Silicon carbide Power MOSFET
SCTWA40N120G2V Features
* Order code VDS RDS(on) max. ID SCTWA40N120G2V 1200 V 100 mΩ 36 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200 °C) Applications
* Switching mode p
