Datasheet4U.com

SCTWA40N120G2V - Silicon carbide Power MOSFET

STMicroelectronics

📥 Download Datasheet

SCTWA40N120G2V Datasheet Preview — Preview of SCTWA40N120G2V PDF

datasheet Preview Page 2

datasheet Preview Page 3

Datasheet Details

Part number	SCTWA40N120G2V
Manufacturer	STMicroelectronics ↗
File Size	223.65 KB
Description	Silicon carbide Power MOSFET
Datasheet	SCTWA40N120G2V-STMicroelectronics.pdf

SCTWA40N120G2V Product details

Description

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Features

Order code VDS RDS(on) max. ID SCTWA40N120G2V 1200 V 100 mΩ 36 A.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

📁 SCTWA40N120G2V Similar Datasheet

SCT-013-000 - Transformer (XiDi Technology)
SCT-013-000V - Split core current transformer (YHDC)
SCT-013-005 - Transformer (YHDC)
SCT-013-010 - Transformer (YHDC)
SCT-013-015 - Transformer (YHDC)
SCT-013-020 - Transformer (YHDC)
SCT-013-025 - Split core current transformer (YHDC)
SCT-013-030 - Transformer (XiDi Technology)

Other Datasheets by STMicroelectronics

SCTWA40N120G2V-4 - Silicon carbide Power MOSFET
SCTWA40N120G2AG - Automotive-grade silicon carbide Power MOSFET
SCTWA40N12G24AG - Automotive-grade silicon carbide Power MOSFET
SCTWA35N65G2V4AG - Automotive-grade silicon carbide Power MOSFET
SCTWA35N65G2VAG - Automotive-grade silicon carbide Power MOSFET
SCTWA60N120G2-4 - Silicon carbide Power MOSFET

Published: Jun 26, 2023 |