Datasheet4U Logo Datasheet4U.com

SCTWA40N120G2V-4

Silicon carbide Power MOSFET

SCTWA40N120G2V-4 Features

* Order code VDS RDS(on) max. ID SCTWA40N120G2V-4 1200 V 100 mΩ 36 A

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Very high operating junction temperature capability (TJ = 200 °C)

* Source sensing pin for incre

SCTWA40N120G2V-4 Datasheet (197.61 KB)

Preview of SCTWA40N120G2V-4 PDF

Datasheet Details

Part number:

SCTWA40N120G2V-4

Manufacturer:

STMicroelectronics ↗

File Size:

197.61 KB

Description:

Silicon carbide power mosfet.
SCTWA40N120G2V-4 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247-4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Driv.

📁 Related Datasheet

SCTWA40N120G2V Silicon carbide Power MOSFET (STMicroelectronics)

SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTWA40N12G24AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTWA60N120G2-4 Silicon carbide Power MOSFET (STMicroelectronics)

SCTWA60N120G2AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)

SCTWA70N120G2V Silicon carbide Power MOSFET (STMicroelectronics)

SCTWA70N120G2V-4 Silicon carbide Power MOSFET (STMicroelectronics)

TAGS

SCTWA40N120G2V-4 Silicon carbide Power MOSFET STMicroelectronics

Image Gallery

SCTWA40N120G2V-4 Datasheet Preview Page 2 SCTWA40N120G2V-4 Datasheet Preview Page 3

SCTWA40N120G2V-4 Distributor