SCTWA40N120G2V-4 Datasheet - STMicroelectronics

datasheet Preview Page 1 from Datasheet4u.com

SCTWA40N120G2V-4 Silicon carbide Power MOSFET

SCTWA40N120G2V-4 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247-4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Driv.
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA40N120G2V-4-STMicroelectronics.pdf

SCTWA40N120G2V-4 Datasheet Preview — Preview of SCTWA40N120G2V-4 PDF

Datasheet Details

Part number:

SCTWA40N120G2V-4

Manufacturer:

STMicroelectronics ↗

File Size:

197.61 KB

Description:

Silicon carbide Power MOSFET

Features

* Order code VDS RDS(on) max. ID SCTWA40N120G2V-4 1200 V 100 mΩ 36 A
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capability (TJ = 200 °C)
* Source sensing pin for incre

Applications

* Switching mode power supply
* DC-DC converters

SCTWA40N120G2V-4 Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

📌 All Tags

SCTWA40N120G2V-4 Silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTWA40N120G2V-4-like datasheet