SCTWA40N120G2V-4 Datasheet, Mosfet, STMicroelectronics

SCTWA40N120G2V-4 Features

• Mosfet Order code VDS RDS(on) max. ID SCTWA40N120G2V-4 1200 V 100 mΩ 36 A
• Very fast and robust intrinsic body diode
• Extremely low gate charge and input capacitance

PDF File Details

Part number:

SCTWA40N120G2V-4

Manufacturer:

STMicroelectronics ↗

File Size:

197.61kb

Download:

📄 Datasheet

Description:

Silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA40N120G2V-4 Application

• Applications
• Switching mode power supply
• DC-DC converters
• Industrial motor control Description This silicon carbide P

TAGS

SCTWA40N120G2V-4

STMicroelectronics

📁 Related Datasheet

SCTWA40N120G2V - Silicon carbide Power MOSFET (STMicroelectronics)
SCTWA40N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 62 mΩ typ., 36 A in an HiP247 long leads package HiP247 long leads D(2, TAB) Features .

SCTWA40N120G2AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA40N120G2AG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package Features Order code .

SCTWA40N12G24AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA40N12G24AG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247‑4 package Features Order code SCTWA40N1.

SCTWA35N65G2V4AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA35N65G2V4AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package Features Order code SCTWA35N6.

SCTWA35N65G2VAG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package Feature.

SCTWA60N120G2-4 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTWA60N120G2-4 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mΩ typ., 60 A in an HiP247-4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Drive.

SCTWA60N120G2AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA60N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247 long leads package Features Order code .

SCTWA60N12G2-4AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA60N12G2-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247-4 package Features Order code SCTWA60N.

SCTWA70N120G2V - Silicon carbide Power MOSFET (STMicroelectronics)
SCTWA70N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247 long leads package HiP247 long leads D(2, TAB) Features .

SCTWA70N120G2V-4 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTWA70N120G2V-4 Datasheet Silicon carbide Power MOSFET 1200 V, 21 mΩ typ., 91 A in an HiP247‑4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Driv.