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SCTWA35N65G2VAG Datasheet - STMicroelectronics

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SCTWA35N65G2VAG Automotive-grade silicon carbide Power MOSFET

SCTWA35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mΩ (typ., TJ = 25 °C) in an HiP247 long leads package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA35N65G2VAG-STMicroelectronics.pdf

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Datasheet Details

Part number:

SCTWA35N65G2VAG

Manufacturer:

STMicroelectronics ↗

File Size:

238.88 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTWA35N65G2VAG VDS 650 V RDS(on) typ. 55 mΩ ID 45 A HiP247 long leads
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode

Applications

* Switching mode power supply
* EV chargers

SCTWA35N65G2VAG Distributors

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