SCTWA40N120G2AG Datasheet - STMicroelectronics

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SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET

SCTWA40N120G2AG Datasheet Automotive‑grade silicon carbide Power MOSFET 1200 V, 75 mΩ typ., 33 A in an HiP247 long leads package .
S(3) This silicon carbide Power MOSFET device has been developed using ST’s AM01475v1_noZen advanced and innovative 2nd generation SiC MOSFET technolo.

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Datasheet Details

Part number:

SCTWA40N120G2AG

Manufacturer:

STMicroelectronics ↗

File Size:

252.97 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTWA40N120G2AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 long leads D(2, TAB) G(1)
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capabi

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCTWA40N120G2AG Distributors

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SCTWA40N120G2AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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