SCTWA40N120G2AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

SCTWA40N120G2AG Datasheet Preview — Preview of SCTWA40N120G2AG PDF

Datasheet Details

Part number	SCTWA40N120G2AG
Manufacturer	STMicroelectronics ↗
File Size	252.97 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTWA40N120G2AG-STMicroelectronics.pdf

SCTWA40N120G2AG Product details

Description

S(3) This silicon carbide Power MOSFET device has been developed using ST’s AM01475v1_noZen advanced and innovative 2nd generation SiC MOSFET technology.The device

Features

Order code SCTWA40N120G2AG VDS 1200 V RDS(on) max. 105 mΩ ID 33 A HiP247 long leads D(2, TAB) G(1).
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Extremely low gate charge and input capacitance.
Very high operating junction temperature capability (TJ = 200 °C).

📁 SCTWA40N120G2AG Similar Datasheet

SCT-013-000 - Transformer (XiDi Technology)
SCT-013-000V - Split core current transformer (YHDC)
SCT-013-005 - Transformer (YHDC)
SCT-013-010 - Transformer (YHDC)
SCT-013-015 - Transformer (YHDC)
SCT-013-020 - Transformer (YHDC)
SCT-013-025 - Split core current transformer (YHDC)
SCT-013-030 - Transformer (XiDi Technology)

Other Datasheets by STMicroelectronics

SCTWA40N120G2V - Silicon carbide Power MOSFET
SCTWA40N120G2V-4 - Silicon carbide Power MOSFET
SCTWA40N12G24AG - Automotive-grade silicon carbide Power MOSFET
SCTWA35N65G2V4AG - Automotive-grade silicon carbide Power MOSFET
SCTWA35N65G2VAG - Automotive-grade silicon carbide Power MOSFET
SCTWA60N120G2-4 - Silicon carbide Power MOSFET

Published: Mar 1, 2023 |