SCTWA35N65G2V4AG Datasheet - STMicroelectronics

datasheet Preview Page 1 from Datasheet4u.com

SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET

SCTWA35N65G2V4AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA35N65G2V4AG-STMicroelectronics.pdf

SCTWA35N65G2V4AG Datasheet Preview — Preview of SCTWA35N65G2V4AG PDF

Datasheet Details

Part number:

SCTWA35N65G2V4AG

Manufacturer:

STMicroelectronics ↗

File Size:

193.65 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTWA35N65G2V4AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Low capacitances
* Source sensing pin for increased efficiency
* Very high operating juncti

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCTWA35N65G2V4AG Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

📌 All Tags

SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

STMicroelectronics SCTWA35N65G2V4AG-like datasheet