SCTWA35N65G2V4AG - Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Datasheet Details

Part number	SCTWA35N65G2V4AG
Manufacturer	STMicroelectronics ↗
File Size	193.65 KB
Description	Automotive-grade silicon carbide Power MOSFET
Datasheet	SCTWA35N65G2V4AG-STMicroelectronics.pdf

This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

Order code SCTWA35N65G2V4AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A HiP247-4 2 34 1 Drain(1, TAB).
AEC-Q101 qualified.
Very fast and robust intrinsic body diode.
Low capacitances.
Source sensing pin for increased efficiency.
Very high operating junction temperature capability (TJ = 200 °C) Gate(4) Driver source(3) Power source(2) ND1TPS2DS3G4.

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Published: Feb 18, 2023 |