SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCTWA35N65G2V4AG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 55 mΩ typ., 45 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTWA35N65G2V4AG
Manufacturer: STMicroelectronics ↗
File Size: 193.65 KB
Datasheet: SCTWA35N65G2V4AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTWA35N65G2V4AG VDS 650 V RDS(on) max. 67 mΩ ID 45 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Low capacitances
* Source sensing pin for increased efficiency
* Very high operating juncti

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCTWA35N65G2V4AG Distributors

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SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTWA35N65G2V4AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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