SCTWA35N65G2V4AG Datasheet, Mosfet, STMicroelectronics

SCTWA35N65G2V4AG Features

  • Mosfet Order code SCTWA35N65G2V4AG VDS 650 V RDS(on) max. 67 mĪ© ID 45 A HiP247-4 2 34 1 Drain(1, TAB)
  • AEC-Q101 qualified
  • Very fast and robust intrinsic body diode

PDF File Details

Part number:

SCTWA35N65G2V4AG

Manufacturer:

STMicroelectronics ā†—

File Size:

193.65kb

Download:

šŸ“„ Datasheet

Description:

Automotive-grade silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using STā€™s advanced and innovative 2nd generation SiC MOSFET technology.

Datasheet Preview: SCTWA35N65G2V4AG šŸ“„ Download PDF (193.65kb)
Rating: 1 ā˜… (2 votes)
Page 2 of SCTWA35N65G2V4AG Page 3 of SCTWA35N65G2V4AG

SCTWA35N65G2V4AG Application

  • Applications
  • Main inverter (electric traction)
  • DC/DC converter for EV/HEV
  • On board charger (OBC) Description This sili

TAGS

SCTWA35N65G2V4AG
Automotive-grade
silicon
carbide
Power
MOSFET
STMicroelectronics

šŸ“ Related Datasheet

SCTWA35N65G2VAG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA35N65G2VAG Datasheet Automotive-grade silicon carbide Power MOSFET 650 V, 45 A, 55 mā„¦ (typ., TJ = 25 Ā°C) in an HiP247 long leads package Feature.

SCTWA40N120G2AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA40N120G2AG Datasheet Automotiveā€‘grade silicon carbide Power MOSFET 1200 V, 75 mĪ© typ., 33 A in an HiP247 long leads package Features Order code .

SCTWA40N120G2V - Silicon carbide Power MOSFET (STMicroelectronics)
SCTWA40N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 62 mĪ© typ., 36 A in an HiP247 long leads package HiP247 long leads D(2, TAB) Features .

SCTWA40N120G2V-4 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTWA40N120G2V-4 Datasheet Silicon carbide Power MOSFET 1200 V, 62 mĪ© typ., 36 A in an HiP247-4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Driv.

SCTWA40N12G24AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA40N12G24AG Datasheet Automotiveā€‘grade silicon carbide Power MOSFET 1200 V, 75 mĪ© typ., 33 A in an HiP247ā€‘4 package Features Order code SCTWA40N1.

SCTWA60N120G2-4 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTWA60N120G2-4 Datasheet Silicon carbide Power MOSFET 1200 V, 35 mā„¦ typ., 60 A in an HiP247-4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Drive.

SCTWA60N120G2AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA60N120G2AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mā„¦ typ., 52 A in an HiP247 long leads package Features Order code .

SCTWA60N12G2-4AG - Automotive-grade silicon carbide Power MOSFET (STMicroelectronics)
SCTWA60N12G2-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mā„¦ typ., 52 A in an HiP247-4 package Features Order code SCTWA60N.

SCTWA70N120G2V - Silicon carbide Power MOSFET (STMicroelectronics)
SCTWA70N120G2V Datasheet Silicon carbide Power MOSFET 1200 V, 21 mĪ© typ., 91 A in an HiP247 long leads package HiP247 long leads D(2, TAB) Features .

SCTWA70N120G2V-4 - Silicon carbide Power MOSFET (STMicroelectronics)
SCTWA70N120G2V-4 Datasheet Silicon carbide Power MOSFET 1200 V, 21 mĪ© typ., 91 A in an HiP247ā€‘4 package HiP247-4 2 34 1 Drain(1, TAB) Gate(4) Driv.

Stock and price

STMicroelectronics
Automotivegrade silicon carbide Power MOSFET 650 V 45 A 55 mOhm typ TJ 25 C in an HiP247 package (Alt: SCTWA35N65G2V4AG)
Avnet Silica
SCTWA35N65G2V4AG
0 In Stock
0
Unit Price : $0
Since 2006. D4U Semicon.   |   Datasheet4U.com   |   Contact Us   |   Privacy Policy   |   Purchase of parts