SCTWA60N12G2-4AG

Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

* Order code SCTWA60N12G2-4AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247-4 2 34 1 Drain(1, TAB)

* AEC-Q101 qualified

* Very fast and robust intrinsic body diode

* Extremely low gate charge and input capacitance

* Very high operating junction temperature capabil

SCTWA60N12G2-4AG

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Automotive-grade silicon carbide power mosfet.

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