SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET

STMicroelectronics

Description

SCTWA60N12G2-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

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Datasheet Specifications

Part number: SCTWA60N12G2-4AG
Manufacturer: STMicroelectronics ↗
File Size: 195.58 KB
Datasheet: SCTWA60N12G2-4AG-STMicroelectronics.pdf
Description: Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTWA60N12G2-4AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capabil

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCTWA60N12G2-4AG Distributors

📁 Related Datasheet

SCT-013-000 SCT-013-000V SCT-013-005 SCT-013-010 SCT-013-015 SCT-013-020

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SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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