SCTWA60N12G2-4AG Datasheet - STMicroelectronics

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SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET

SCTWA60N12G2-4AG Datasheet Automotive-grade silicon carbide Power MOSFET 1200 V, 45 mΩ typ., 52 A in an HiP247-4 package .
This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA60N12G2-4AG-STMicroelectronics.pdf

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Datasheet Details

Part number:

SCTWA60N12G2-4AG

Manufacturer:

STMicroelectronics ↗

File Size:

195.58 KB

Description:

Automotive-grade silicon carbide Power MOSFET

Features

* Order code SCTWA60N12G2-4AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247-4 2 34 1 Drain(1, TAB)
* AEC-Q101 qualified
* Very fast and robust intrinsic body diode
* Extremely low gate charge and input capacitance
* Very high operating junction temperature capabil

Applications

* Main inverter (electric traction)
* DC/DC converter for EV/HEV

SCTWA60N12G2-4AG Distributors

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SCTWA60N12G2-4AG Automotive-grade silicon carbide Power MOSFET STMicroelectronics

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