SCTWA60N12G2-4AG Datasheet, Mosfet, STMicroelectronics

SCTWA60N12G2-4AG Features

• Mosfet Order code SCTWA60N12G2-4AG VDS 1200 V RDS(on) max. 58 mΩ ID 52 A HiP247-4 2 34 1 Drain(1, TAB)
• AEC-Q101 qualified
• Very fast and robust intrinsic body diode <

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SCTWA60N12G2-4AG

Manufacturer:

STMicroelectronics ↗

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195.58kb

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📄 Datasheet

Description:

Automotive-grade silicon carbide power mosfet. This silicon carbide Power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology.

SCTWA60N12G2-4AG Application

• Applications
• Main inverter (electric traction)
• DC/DC converter for EV/HEV
• On board charger (OBC) Description This sili

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SCTWA60N12G2-4AG

STMicroelectronics

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