STB30NF20 Datasheet - STMicroelectronics

N-channel Power MOSFET

STB30NF20 Features

* Type VDSS RDS(on) ID STP30NF20 200V 0.075Ω 30A STW30NF20 200V 0.075Ω 30A STB30NF20 200V 0.075Ω 30A

* Gate charge minimized

* 100% avalanche tested

* Excellent figure of merit (RDS

* Qg)

* Very good manufactuing repeability

* Very low intrinsic capacitances PTOT 125W 125

STB30NF20 General Description

This Power MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency isolated DC-DC converters. 3 2 1 TO-247 3 1 D²PAK 3 2 1 TO-220 Fig.

STB30NF20 Datasheet (386.45 KB)