STB30NM60ND

N-channel MOSFET

STMicroelectronics

STB30NM60ND Features

* Type VDSS @TJ max RDS(on) max ID STB30NM60ND )STI30NM60ND t(sSTF30NM60ND cSTP30NM60ND uSTW30NM60ND 650 V 0.13 Ω 25 A 25 A 25 A(1) 25 A 25 A rod1. Limited only by maximum temperature allowed P

* The world’s best RDS(on) in TO-220 amongst tethe fast recovery diode devices le

* 100% ava

STB30NM60ND General Description

teThe FDmesh™ II series belongs to the second legeneration of MDmesh™ technology. This orevolutionary Power MOSFET associates a new svertical structure to the company's strip layout band associates all advantages of reduced onOresistance and fast switching with an intrinsic fast- I2PAK 123 TO-24.

STB30NM60ND Datasheet (582.26 KB)