STB40N20

N-CHANNEL MOSFET

STMicroelectronics

STB40N20 Features

* TYPE www.DataSheet4U.com STP40N20 Figure 1: Package ID 40 A 40 A 40 A Pw 160 W 160 W 160 W 3 1 2 1 2 3 VDSS 200 V 200 V 200 V RDS(on) < 0.045 Ω < 0.045 Ω < 0.045 Ω STW40N20 STB40N20

* TYPICAL RDS(on) = 0.038 Ω GATE CHARGE MINIMIZED VERY LOW INTRINSIC CAPACITAN

STB40N20 General Description

This MOSFET series realized with STMicroelectronics unique STripFET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced high-efficiency isolated DC-DC converters. 1 D2PAK Figure 2: Internal Schematic Diagram .

STB40N20 Datasheet (388.33 KB)