STB6N60M2

N-channel Power MOSFET

STMicroelectronics

STB6N60M2 Features

* Order code STB6N60M2 STD6N60M2 VDS @ TJmax 650 V RDS(on) max 1.2 Ω ID 4.5 A

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener-protected Figure 1. Internal schematic diagram , TAB Applications

* Swi

STB6N60M2 General Description

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Or.

STB6N60M2 Datasheet (560.01 KB)

STB6N60M2 Datasheet Preview — Preview of STB6N60M2 PDF

Datasheet Details

Part number:

STB6N60M2

Manufacturer:

STMicroelectronics ↗

File Size:

560.01 KB

Description:

N-channel power mosfet.
STB6N60M2, STD6N60M2 N-channel 600 V, 1.06 Ω typ., 4.5 A MDmesh™ M2 Power MOSFETs in D2PAK and DPAK packages Datasheet - production data TAB 3 1 D2 P.

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STB6N60M2 N-channel Power MOSFET STMicroelectronics

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STB6N60M2 Features

STB6N60M2 General Description

Datasheet Details

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Description:

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