STB6N60M2 Datasheet - STMicroelectronics

STB6N60M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. Or.

STB6N60M2 Features

* Order code STB6N60M2 STD6N60M2 VDS @ TJmax 650 V RDS(on) max 1.2 Ω ID 4.5 A

* Extremely low gate charge

* Excellent output capacitance (Coss) profile

* 100% avalanche tested

* Zener-protected Figure 1. Internal schematic diagram , TAB Applications

* Swi

STB6N60M2-STMicroelectronics.pdf