STB6NK60Z-1, STB6NK60Z Datasheet - ST Microelectronics

STB6NK60Z-1 N-CHANNEL Power MOSFET

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications. 3 2 1 TO-220 3 1 D²PA.

STB6NK60Z-1 Features

* Type STB6NK60Z STB6NK60Z-1 STP6NK60ZFP STP6NK60Z VDSS 600 V 600 V 600 V 600 V RDS(on) ID PW < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 110 W < 1.2 Ω 6 A 30 W < 1.2 Ω 6 A 110 W

* Extremely high dv/dt capability

* 100% avalanche tested

* Gate charge minimized Application

* Switching appli

STB6NK60Z_STMicroelectronics.pdf