STB6N62K3 Datasheet - STMicroelectronics

STB6N62K3 N-channel Power MOSFET

These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitabl.

STB6N62K3 Features

* Order codes STB6N62K3 STD6N62K3 VDSS 620 V RDS(on) max. < 1.2 Ω ID Pw 5.5 A 90 W

* 100% avalanche tested

* Extremely high dv/dt capability

* Gate charge minimized

* Very low intrinsic capacitance

* Improved diode reverse recovery characteristics

* Zener-protected Applic

STB6N62K3-STMicroelectronics.pdf