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STB6N62K3 STD6N62K3
N-channel 620 V, 0.95 Ω, 5.5 A SuperMESH3™ Power MOSFET in D²PAK, DPAK
Features
Order codes
STB6N62K3 STD6N62K3
VDSS 620 V
RDS(on) max.
< 1.2 Ω
ID Pw 5.5 A 90 W
■ 100% avalanche tested ■ Extremely high dv/dt capability ■ Gate charge minimized ■ Very low intrinsic capacitance ■ Improved diode reverse recovery
characteristics ■ Zener-protected
Applications
■ Switching applications
Description
These SuperMESH3™ Power MOSFETs are the result of improvements applied to STMicroelectronics’ SuperMESH™ technology, combined with a new optimized vertical structure. These devices boast an extremely low onresistance, superior dynamic performance and high avalanche capability, rendering them suitable for the most demanding applications.
Table 1.
STB6N62K3 Datasheet
