Datasheet4U Logo Datasheet4U.com

STB6N80K5 - N-channel Power MOSFET

Datasheet Summary

Description

technology based on an innovative proprietary vertical structure.

Features

  • Order code VDS STB6N80K5 800 V.
  • Industry’s lowest RDS(on) x area.
  • Industry’s best FoM (figure of merit).
  • Ultra-low gate charge.
  • 100% avalanche tested.
  • Zener-protected.

📥 Download Datasheet

Datasheet preview – STB6N80K5

Datasheet Details

Part number STB6N80K5
Manufacturer STMicroelectronics
File Size 934.15 KB
Description N-channel Power MOSFET
Datasheet download datasheet STB6N80K5 Datasheet
Additional preview pages of the STB6N80K5 datasheet.

📁 Similar Datasheet

  • STB6NA60 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB6NA80 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB6NB50 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB6NB90 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB6NK60Z - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB6NK60Z-1 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB6000 - N-CHANNEL Power MOSFET (ST Microelectronics)
  • STB6010 - SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (EIC)
  • STB60100C - SCHOTTKY RECTIFIER (SMC Diode)
  • STB6011 - SURFACE MOUNT BIDIRECTIONAL TRANSIENT VOLTAGE SUPPRESSOR (EIC)
Other Datasheets by STMicroelectronics

Full PDF Text Transcription

Click to expand full text
STB6N80K5 Datasheet N-channel 800 V, 1.3 Ω typ., 4.5 A MDmesh K5 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) Features Order code VDS STB6N80K5 800 V • Industry’s lowest RDS(on) x area • Industry’s best FoM (figure of merit) • Ultra-low gate charge • 100% avalanche tested • Zener-protected Applications RDS(on) max. 1.6 Ω ID 4.5 A • Switching applications G(1) Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) technology based on an innovative proprietary vertical structure. The result is a AM01476v1_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency.
Published: |