STB6N80K5

N-channel Power MOSFET

STMicroelectronics

STB6N80K5 Features

* Order code VDS STB6N80K5 800 V

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected Applications RDS(on) max. 1.6 Ω ID 4.5 A

* Switching applications

STB6N80K5 General Description

This very high voltage N-channel Power MOSFET is designed using MDmesh K5 S(3) technology based on an innovative proprietary vertical structure. The result is a AM01476v1_tab dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high.

STB6N80K5 Datasheet (934.15 KB)