STB6N65M2 Datasheet - STMicroelectronics

STB6N65M2 N-channel Power MOSFET

These devices are N-channel Power MOSFETs developed using MDmesh™ M2 technology. Thanks to their strip layout and improved vertical structure, the devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable for the most demanding high efficiency converters. AM.

STB6N65M2 Features

* TAB 3 1 D2 PAK TAB 3 1 DPAK Figure 1. Internal schematic diagram , TAB Order codes STB6N65M2 STD6N65M2 VDS RDS(on) max 650 V 1.35 Ω ID 4A

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected Appl

STB6N65M2-STMicroelectronics.pdf