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STB7ANM60N Datasheet - STMicroelectronics

STB7ANM60N N-channel Power MOSFET

*  6  These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suita.

STB7ANM60N Features

* TAB 2 3 1 D 2 PAK TAB 3 1 DPAK Order codes VDS @ Tjmax RDS(on) max. ID STB7ANM60N STD7ANM60N 650 V 0.9 Ω 5A

* Designed for automotive applications and AEC-Q101 qualified

* 100% avalanche tested

* Low input capacitance and gate charge

* Low gate input resistanc

STB7ANM60N Datasheet (720.93 KB)

Preview of STB7ANM60N PDF

Datasheet Details

Part number:

STB7ANM60N

Manufacturer:

STMicroelectronics ↗

File Size:

720.93 KB

Description:

N-channel power mosfet.

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STB7ANM60N N-channel Power MOSFET STMicroelectronics

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