STB80N4F6AG Datasheet (STMicroelectronics)

STB80N4F6AG, N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using the STripFET™ F6 technology with a new trench gate structure.

The resulting Power MOSFET exhibits very low RDS(on) in all packages.

S(3) Order code STB80N4F6AG AM01475v1_Tab Table 1: Device summary Marking Package 80N4F6 D²PAK Packagin

STB80N4F6AG Features

* Order code STB80N4F6AG VDS 40 V RDS(on) max. 6 mΩ ID 80 A

* Designed for automotive applications and AEC-Q101 qualified

* Very low on-resistance

* Very low gate charge

* High avalanche ruggedness

* Low gate drive power loss Applications

* Switching applications Descriptio