STD10P10F6 - P-Channel Power MOSFET
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure.
The resulting Power MOSFET exhibits AM11258v1 very low RDS(on) in all packages.
Product status link STD10P10F6 Product summary Order code STD10P10F6 Marking 10P10F6 Package D
