STF15NM60N
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N-channel power mosfet. This series of devices implements the second generation of MDmesh™ Technology. This revolutionary Power MOSFET associates a new verti
📁 Related Datasheet
STF15NM60ND - N-channel Power MOSFET
(STMicroelectronics)
STB15NM60ND - STF/I15NM60ND STP15NM60ND - STW15NM60ND
N-channel 600 V - 0.27 Ω - 14 A - FDmesh™ II Power MOSFET D2PAK, I2PAK, TO-220, TO-220FP, TO-247.
STF15NM60ND - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
FEATURES ·Drain Current –ID= 14A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 600V(Min) ·Static Drain-Source On-Resistance
.
STF15NM65N - N-channel Power MOSFET
(STMicroelectronics)
STF15NM65N-STI15NM65N-STW15NM65N STB15NM65N-STP15NM65N
N-channel 650V - 0.25Ω - 15.5A - TO-220/FP - D2/I2PAK - TO-247 Second generation MDmesh™ Power .
STF15NM65N - N-Channel MOSFET
(INCHANGE)
Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STF15NM65N
·FEATURES ·Low input capacitance and gate charge ·Low gate input resistance ·100% .
STF15N60M2-EP - N-channel Power MOSFET
(STMicroelectronics)
STF15N60M2-EP, STFI15N60M2-EP
N-channel 600 V, 0.340 Ω typ., 11 A MDmesh™ M2 EP Power MOSFET in TO-220FP and I²PAKFP packages
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STF15N65M5 - N-channel Power MOSFET
(STMicroelectronics)
STF15N65M5, STFI15N65M5, STP15N65M5
N-channel 650 V, 0.308 Ω typ., 11 A MDmesh™ V Power MOSFET in TO-220FP, I2PAKFP and TO-220 packages
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STF15N65M5 - N-Channel MOSFET
(INCHANGE)
isc N-Channel MOSFET Transistor
STF15N65M5
FEATURES ·Drain Current –ID= 11A@ TC=25℃ ·Drain Source Voltage-
: VDSS= 650V(Min) ·Static Drain-Source On.
STF15N80K5 - N-channel Power MOSFET
(STMicroelectronics)
STB15N80K5, STF15N80K5, STP15N80K5, STW15N80K5
N-channel 800 V, 0.3 Ω typ., 14 A MDmesh™ K5 Power MOSFETs in D2PAK, TO-220FP, TO-220 and TO-247 packag.
STF15N95K5 - N-channel Power MOSFETs
(STMicroelectronics)
STF15N95K5, STP15N95K5, STW15N95K5
N-channel 950 V, 0.41 Ω typ., 12 A SuperMESH™ 5 Power MOSFETs in TO-220FP, TO-220 and TO-247 packages
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STF150N10F7 - N-Channel MOSFET
(VBsemi)
STF150N10F7-VB
STF150N10F7-VB Datasheet N-Channel 100 V (D-S) 175 °C MOSFET
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PRODUCT SUMMARY
VDS (V) RDS(on) () at VGS = 10 V ID (A) .
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