Datasheet Details
- Part number
- STF10NM60ND
- Manufacturer
- INCHANGE
- File Size
- 242.59 KB
- Datasheet
- STF10NM60ND-INCHANGE.pdf
- Description
- N-Channel MOSFET
STF10NM60ND Description
isc N-Channel MOSFET Transistor *.
STF10NM60ND Features
* Drain-source on-resistance:
RDS(on) ≤ 0.6Ω (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device
performance and reliable operation
* DESCRITION
STF10NM60ND Applications
* ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
600
VGS
Gate-Source Voltage
±25
ID
Drain Current-Continuous
8
IDM
Drain Current-Single Pulsed
32
PD
Total Dissipation @TC=25℃
25
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temp
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