STF10NM60ND N-Channel MOSFET

INCHANGE

Description

isc N-Channel MOSFET Transistor *.

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Datasheet Specifications

Part number: STF10NM60ND
Manufacturer: INCHANGE
File Size: 242.59 KB
Datasheet: STF10NM60ND-INCHANGE.pdf
Description: N-Channel MOSFET

Features

* Drain-source on-resistance: RDS(on) ≤ 0.6Ω (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±25 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 32 PD Total Dissipation @TC=25℃ 25 Tj Max. Operating Junction Temperature 150 Tstg Storage Temp

STF10NM60ND Distributors

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STF10NM60ND N-Channel MOSFET INCHANGE

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