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STF10NM60ND - N-Channel MOSFET

STF10NM60ND Description

isc N-Channel MOSFET Transistor *.

STF10NM60ND Features

* Drain-source on-resistance: RDS(on) ≤ 0.6Ω (max)
* Enhancement mode
* Fast Switching Speed
* 100% avalanche tested
* Minimum Lot-to-Lot variations for robust device performance and reliable operation
* DESCRITION

STF10NM60ND Applications

* ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±25 ID Drain Current-Continuous 8 IDM Drain Current-Single Pulsed 32 PD Total Dissipation @TC=25℃ 25 Tj Max. Operating Junction Temperature 150 Tstg Storage Temp

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Datasheet Details

Part number
STF10NM60ND
Manufacturer
INCHANGE
File Size
242.59 KB
Datasheet
STF10NM60ND-INCHANGE.pdf
Description
N-Channel MOSFET

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