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STF11NM50N - N-Channel MOSFET

STF11NM50N Description

isc N-Channel MOSFET Transistor STF11NM50N .

STF11NM50N Features

* Drain Current
* ID= 8.5A@ TC=25℃
* Drain Source Voltage- : VDSS= 500V(Min)
* Static Drain-Source On-Resistance : RDS(on) = 0.47Ω(Max)
* 100% avalanche tested

STF11NM50N Applications

* Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 8.5 A IDM Drain Current-Single Pluse 34 A PD Total Dissipation @TC=25℃ 25 W TJ Max. O

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Datasheet Details

Part number
STF11NM50N
Manufacturer
INCHANGE
File Size
261.41 KB
Datasheet
STF11NM50N-INCHANGE.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET INCHANGE
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