STF11N60M2-EP

N-channel Power MOSFET

STMicroelectronics

STF11N60M2-EP Features

* 23 1 TO-220FP D(2) Order code VDS RDS(on) max. STF11N60M2-EP 600 V 0.595 Ω

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* Very low turn-off switching losses

* 100% avalanche tested

* Zener-protected ID 7.5 A Applications

STF11N60M2-EP General Description

This device is an N-channel Power MOSFET developed using MDmesh™ M2 enhanced performance (EP) technology. Thanks to its strip layout and an S(3) AM15572v1_no_tab improved vertical structure, the device exhibits low on-resistance, optimized switching characteristics with very low turn-off switching l.

STF11N60M2-EP Datasheet (283.83 KB)