STF11N60DM2

N-CHANNEL POWER MOSFET

STMicroelectronics

STF11N60DM2 Features

* Order code STF11N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.420 Ω ID PTOT 10 A 25 W

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely high dv/dt ruggedness

* Zener-protected Applications

STF11N60DM2 General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STF11N60DM2 Datasheet (571.86 KB)

STF11N60DM2 Datasheet Preview — Preview of STF11N60DM2 PDF

Datasheet Details

Part number:

STF11N60DM2

Manufacturer:

STMicroelectronics ↗

File Size:

571.86 KB

Description:

N-channel power mosfet.
STF11N60DM2 N-channel 600 V, 0.370 Ω typ., 10 A MDmesh™ DM2 Power MOSFET in a TO-220FP package Datasheet - production data 3 2 1 TO-220FP Figure 1: .

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STF11N60DM2 N-CHANNEL POWER MOSFET STMicroelectronics

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STF11N60DM2 Features

STF11N60DM2 General Description

Datasheet Details

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