STF11N65M2

N-channel Power MOSFET

STMicroelectronics

STF11N65M2 Features

* Order code VDS RDS(on) max. STF11N65M2 650 V 0.68 Ω

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected ID 7A PTOT 25 W D(2) G(1) S(3) Applications

* Switching applications NG1D2S3Z

STF11N65M2 General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. Produ.

STF11N65M2 Datasheet (450.13 KB)