STF10NM65N - N-channel Power MOSFET
This series of devices implements the second generation of MDmesh™ Technology.
This revolutionary Power MOSFET associates a new vertical structure to the Company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
It is therefore suitable for the most demanding high effi
STF10NM65N Features
* www.DataSheet4U.com Type VDSS (@Tjmax) 710 V 710 V 710 V 710 V RDS(on) max < 0.48 Ω < 0.48 Ω < 0.48 Ω < 0.48 Ω ID 2 3 3 1 2 STD10NM65N STF10NM65N STP10NM65N STU10NM65N 9A 9 A(1) 9A 9A 1 TO-220 IPAK 1. Limited only by maximum temperature allowed
* 3 1 3 1 2 100% avalanche
