* Order code STF10N60DM2 VDS @ TJmax. 650 V RDS(on) max. 0.530 Ω ID PTOT 8 A 25 W
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on-resistance
* 100% avalanche tested
* Extremely high dv/dt ruggedness
* Zener-protected Applications
STF10N60DM2 Datasheet (569.21 KB)
STF10N60DM2
569.21 KB
N-channel power mosfet.
STF10N60DM2
N-channel 600 V, 0.440 Ω typ., 8 A MDmesh™ DM2 Power MOSFET in a TO-220FP package
Datasheet - production data
3 2 1
TO-220FP
Figure 1: I.
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