STF3N80K5 Datasheet (STMicroelectronics)

STF3N80K5, N-channel Power MOSFET

S(3) AM15572v1_no_tab This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure.

The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and h

STF3N80K5 Features

* 3 2 1 TO-220FP D(2) Order code VDS STF3N80K5 800 V

* Industry’s lowest RDS(on) x area

* Industry’s best FoM (figure of merit)

* Ultra-low gate charge

* 100% avalanche tested

* Zener-protected RDS(on) max. 3.5 Ω ID 2.5 A Applications G(1)