* Among the lowest RDS(on) on the market
* Excellent FoM (figure of merit)
* Low Crss/Ciss ratio for EMI immunity
* High avalanche ruggedness Applications
* Switching applications Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gat
STF30N10F7 Datasheet (539.52 KB)
STF30N10F7
539.52 KB
N-channel power mosfet.
STF30N10F7
N-channel 100 V, 0.02 Ω typ., 24 A STripFET™ F7
Power MOSFET in a TO-220FP package
Datasheet - production data
TO-220FP Figure 1: Interna.
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