STF31N65M5 - N-Channel MOSFET

INCHANGE

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Datasheet Details

Part number	STF31N65M5
Manufacturer	INCHANGE
File Size	246.52 KB
Description	N-Channel MOSFET
Datasheet	STF31N65M5-INCHANGE.pdf

STF31N65M5 Product details

Description

Low Drain-Source On-Resistance APPLICATIONS Switching application ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 650 V VGS Gate-Source Voltage-Continuous ±25 V ID Drain Current-Continuous 22 A IDM Drain Current-Single Pluse 88 A PD Total Dissipation @TC=25℃ 30 W TJ Max.Operating Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Ju

Features

Drain Current.
ID=22A@ TC=25℃.
Drain Source Voltage- : VDSS= 650V(Min).
Static Drain-Source On-Resistance : RDS(on) = 148mΩ(Max).
100% avalanche tested.
Minimum Lot-to-Lot variations for robust device performance and reliable operation.

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Published: Dec 7, 2020 |