STFH10N60M2 Datasheet - STMicroelectronics

STFH10N60M2 N-channel Power MOSFET

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The TO.

STFH10N60M2 Features

* Order code STFH10N60M2 VDS at TJmax. 650 V RDS(on) max. 0.60 Ω ID 7.5 A

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected

* Wide distance of 4.25 mm between the pins Applications

STFH10N60M2-STMicroelectronics.pdf