STFH10N60M2 Datasheet - STMicroelectronics

N-channel Power MOSFET

STFH10N60M2 Features

* Order code STFH10N60M2 VDS at TJmax. 650 V RDS(on) max. 0.60 Ω ID 7.5 A

* Extremely low gate charge

* Excellent output capacitance (COSS) profile

* 100% avalanche tested

* Zener-protected

* Wide distance of 4.25 mm between the pins Applications

STFH10N60M2 General Description

This device is an N-channel Power MOSFET developed using MDmesh M2 technology. Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters. The TO.

STFH10N60M2 Datasheet (411.26 KB)

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Datasheet Details

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STFH10N60M2

Manufacturer:

STMicroelectronics ↗

File Size:

411.26 KB

Description:

N-channel power mosfet.
STFH10N60M2 Datasheet N-channel 600 V, 0.55 Ω typ., 7.5 A MDmesh M2 Power MOSFET in a TO-220FP wide creepage package TO-220FP wide creepage D(2) G(1).

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STFH10N60M2 Features

STFH10N60M2 General Description

Datasheet Details

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