STFH10N60M2 - N-channel Power MOSFET
This device is an N-channel Power MOSFET developed using MDmesh M2 technology.
Thanks to its strip layout and an improved vertical structure, the device exhibits low on-resistance and optimized switching characteristics, rendering it suitable for the most demanding high efficiency converters.
The TO
STFH10N60M2 Features
* Order code STFH10N60M2 VDS at TJmax. 650 V RDS(on) max. 0.60 Ω ID 7.5 A
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* 100% avalanche tested
* Zener-protected
* Wide distance of 4.25 mm between the pins Applications
