STGW60V60DF - 650V 60A IGBT
These devices are IGBTs developed using an advanced proprietary trench gate fieldstop structure.
The device is part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high frequency converters.
Furthermore, the posi
STGW60V60DF Features
* Maximum junction temperature: TJ = 175 °C
* Tail-less switching off
* VCE(sat) = 1.85 V (typ.) @ IC = 60 A
* Tight parameter distribution
* Safe paralleling
* Low thermal resistance
* Very fast soft recovery antiparallel diode Applications
