STGW60H65DF

field stop trench gate IGBT

STMicroelectronics

STGW60H65DF Features

* High speed switching

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* 6 µs short-circuit withstand time

* Very fast soft recovery antiparallel diode

* Lead free package Applications

* Photovoltaic inverters

* Uninterruptible power su

STGW60H65DF General Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperatur.

STGW60H65DF Datasheet (853.59 KB)