STGW60H65DRF - field stop trench gate IGBT
This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.
This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters.
Furthermore, a slightly positive VCE(sat) temperatur
STGW60H65DRF Features
* Very high speed switching
* Tight parameters distribution
* Safe paralleling
* Low thermal resistance
* 6 µs short-circuit withstand time
* Ultrafast soft recovery antiparallel diode Order code Table 1. Device summary Marking Package STGW60H65DRF GW60H65DRF TO-247
