STGW60H65DRF Datasheet - STMicroelectronics

STGW60H65DRF field stop trench gate IGBT

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure. This IGBT is the result of a compromise between conduction and switching losses, maximizing the efficiency of high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperatur.

STGW60H65DRF Features

* Very high speed switching

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance

* 6 µs short-circuit withstand time

* Ultrafast soft recovery antiparallel diode Order code Table 1. Device summary Marking Package STGW60H65DRF GW60H65DRF TO-247

STGW60H65DRF-STMicroelectronics.pdf