STGW60H65FB Datasheet, Igbt, STMicroelectronics

STGW60H65FB Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• High speed switching series
• Minimized tail current
• VCE(sat) = 1.6 V (typ.) @ IC = 60 A
• Tight

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Part number:

STGW60H65FB

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STMicroelectronics ↗

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📄 Datasheet

Description:

Trench gate field-stop igbt. These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new

STGW60H65FB Application

• Applications
• Photovoltaic inverters
• High frequency converters Description These are IGBT devices developed using an advanced pro

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STGW60H65FB

STMicroelectronics

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