STGW60H65FB Datasheet - STMicroelectronics

STGW60H65FB Trench gate field-stop IGBT

These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a sl.

STGW60H65FB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 1.6 V (typ.) @ IC = 60 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance Applications

* Photovol

STGW60H65FB-STMicroelectronics.pdf