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STGW60H65FB

Trench gate field-stop IGBT

STGW60H65FB Features

* Maximum junction temperature: TJ = 175 °C

* High speed switching series

* Minimized tail current

* VCE(sat) = 1.6 V (typ.) @ IC = 60 A

* Tight parameters distribution

* Safe paralleling

* Low thermal resistance Applications

* Photovol

STGW60H65FB General Description

These are IGBT devices developed using an advanced proprietary trench gate and field-stop structure. The devices are part of the new HB series of IGBTs which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, a sl.

STGW60H65FB Datasheet (714.15 KB)

Preview of STGW60H65FB PDF

Datasheet Details

Part number:

STGW60H65FB

Manufacturer:

STMicroelectronics ↗

File Size:

714.15 KB

Description:

Trench gate field-stop igbt.
STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Datasheet - production data TAB 3 2 1 TO-247 TO-3P 3 2 1 F.

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STGW60H65FB Trench gate field-stop IGBT STMicroelectronics

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