STGW60H65DFB-4 - IGBT

STMicroelectronics

STGW60H65DFB-4 Datasheet Preview — Preview of STGW60H65DFB-4 PDF

Datasheet Details

Part number	STGW60H65DFB-4
Manufacturer	STMicroelectronics ↗
File Size	551.64 KB
Description	IGBT
Datasheet	STGW60H65DFB-4-STMicroelectronics.pdf

STGW60H65DFB-4 Product details

Description

(2) NG4K3E2C1_TAB This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter.A faster switching event can be achieved by the Kelvin pin, which separates power path from driving signal.Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter d

Features

Maximum junction temperature: TJ = 175 °C.
Excellent switching performance thanks to the extra driving kelvin pin.
Low VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
Minimized tail current.
Tight parameter distribution.
Safe paralleling.
Low thermal resistance.
Very fast soft recovery antiparallel diode.

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Published: Apr 15, 2020 |