STGW60H65DFB-4 Datasheet, Igbt, STMicroelectronics

STGW60H65DFB-4 Features

• Igbt
• Maximum junction temperature: TJ = 175 °C
• Excellent switching performance thanks to the extra driving kelvin pin
• Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A

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Part number:

STGW60H65DFB-4

Manufacturer:

STMicroelectronics ↗

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551.64kb

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📄 Datasheet

Description:

Igbt. (2) NG4K3E2C1_TAB This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is par

STGW60H65DFB-4 Application

• Applications
• Photovoltaic inverters
• High-frequency converters DescriptionE(2) NG4K3E2C1_TAB This device is an IGBT developed

TAGS

STGW60H65DFB-4

STMicroelectronics

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