STGW60H65DFB-4 Datasheet - STMicroelectronics

STGW60H65DFB-4 IGBT

(2) NG4K3E2C1_TAB This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. A .

STGW60H65DFB-4 Features

* Maximum junction temperature: TJ = 175 °C

* Excellent switching performance thanks to the extra driving kelvin pin

* Low VCE(sat) = 1.6 V (typ.) @ IC = 60 A

* Minimized tail current

* Tight parameter distribution

* Safe paralleling

* Low ther

STGW60H65DFB-4-STMicroelectronics.pdf