STGW60H65DFB-4 Datasheet - STMicroelectronics

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STGW60H65DFB-4 IGBT

STGW60H65DFB-4 Datasheet Trench gate field-stop 650 V, 60 A high speed HB series IGBT TO247-4 2 34 1 C(1, TAB) G(4) K(3) .
(2) NG4K3E2C1_TAB This device is an IGBT developed using an advanced proprietary trench gate fieldstop structure.

STGW60H65DFB-4-STMicroelectronics.pdf

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Datasheet Details

Part number:

STGW60H65DFB-4

Manufacturer:

STMicroelectronics ↗

File Size:

551.64 KB

Description:

IGBT

Features

* Maximum junction temperature: TJ = 175 °C
* Excellent switching performance thanks to the extra driving kelvin pin
* Low VCE(sat) = 1.6 V (typ. ) @ IC = 60 A
* Minimized tail current
* Tight parameter distribution
* Safe paralleling
* Low ther

Applications

* Photovoltaic inverters

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STGW60H65DFB-4 IGBT STMicroelectronics

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