STGW60H65F Datasheet - STMicroelectronics

STGW60H65F 650 V field stop trench gate IGBT

Using advanced proprietary trench gate and field stop structure, this IGBT leads to an optimized compromise between conduction and switching losses maximizing the efficiency for high switching frequency converters. Furthermore, a slightly positive VCE(sat) temperature coefficient and a very tight pa.

STGW60H65F Features

* High speed switching Tight parameter distribution Safe paralleling Low thermal resistance 6 µs short-circuit withstand time Lead free package TO-247 2 1 3 1 3 2 Applications

* TO-3P Photovoltaic inverters Uninterruptible power suppl

STGW60H65F-STMicroelectronics.pdf