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STGW60H60DLFB - Trench gate field-stop IGBT

STMicroelectronics

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Datasheet Details

Part number	STGW60H60DLFB
Manufacturer	STMicroelectronics ↗
File Size	828.95 KB
Description	Trench gate field-stop IGBT
Datasheet	STGW60H60DLFB-STMicroelectronics.pdf

STGW60H60DLFB Product details

Description

This device is an IGBT developed using an advanced proprietary trench gate and field stop structure.

Features

Maximum junction temperature: TJ = 175 °C.
High speed switching series.
Minimized tail current.
VCE(sat) = 1.6 V (typ. ) @ IC = 60 A.
Tight parameters distribution.
Safe paralleling.
Low thermal resistance.
Low VF soft recovery co-packaged diode.
Lead free package Figure 1. Internal schematic diagram C (2 or TAB).

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Published: Sep 6, 2017 |